CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3.1A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 500V 3.1A (TC) 35W (TC) THROUGH HOLE TO-220-3

DRAIN TO SOURCE VOLTAGE (VDSS):  500V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  38NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  610PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  IRFI830GPBF

MANUFACTURER STANDARD LEAD TIME:  11 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-220-3 FULL PACK, ISOLATED TAB

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  35W (TC)

RDS ON (MAX) @ ID, VGS:  1.5 OHM @ 1.9A, 10V

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  TO-220-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA