CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  960MA (TC)

DETAILED DESCRIPTION:  N-CHANNEL 200V 960MA (TC) 2W (TA), 3.1W (TC) SURFACE MOUNT SOT-223

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  8.2NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  140PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  IRFL210TRPBF

MANUFACTURER STANDARD LEAD TIME:  18 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2W (TA), 3.1W (TC)

RDS ON (MAX) @ ID, VGS:  1.5 OHM @ 580MA, 10V

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  SOT-223

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA

ALTERNATE PARTS:  IRFL210PBF IRFL210TRPBF IRFL210PBF IRFL210PBF