CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 2A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 600V
FET FEATURE: STANDARD
FET TYPE: MOSFET N-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
GATE CHARGE (QG) @ VGS: 18NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 350PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: IRFRC20PBF
MANUFACTURER STANDARD LEAD TIME: 11 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: TUBE
POWER - MAX: 2.5W
RDS ON (MAX) @ ID, VGS: 4.4 OHM @ 1.2A, 10V
STANDARD PACKAGE: 75
SUPPLIER DEVICE PACKAGE: D-PAK
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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