IRFSL11N50APBF
N-CHANNEL 500V 11A (TC) 190W (TC) THROUGH HOLE TO-262-3Call for availability
Manufactured by:
Mfr Part#: IRFSL11N50APBF
PACKAGE / CASE: TO-262-3 LONG LEADS, I²PAK, TO-262AA
PACKAGING: TUBE
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: TO-262-3
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 11A (TC)
DETAILED DESCRIPTION: N-CHANNEL 500V 11A (TC) 190W (TC) THROUGH HOLE TO-262-3
DRAIN TO SOURCE VOLTAGE (VDSS): 500V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 51NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1426PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: IRFSL11N50APBF
MANUFACTURER STANDARD LEAD TIME: 18 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-262-3 LONG LEADS, I²PAK, TO-262AA
PACKAGING: TUBE
POWER DISSIPATION (MAX): 190W (TC)
RDS ON (MAX) @ ID, VGS: 550 MOHM @ 6.6A, 10V
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: TO-262-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±30V
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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