IRLD024PBF
N-CHANNEL 60V 2.5A (TA) 1.3W (TA) THROUGH HOLE 4-DIP, HEXDIP, HVMDIPCall for availability
Manufactured by:
Mfr Part#: IRLD024PBF
PACKAGE / CASE: 4-DIP (0.300", 7.62MM)
PACKAGING: TUBE
STANDARD PACKAGE: 100
SUPPLIER DEVICE PACKAGE: 4-DIP, HEXDIP, HVMDIP
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 2.5A (TA)
DETAILED DESCRIPTION: N-CHANNEL 60V 2.5A (TA) 1.3W (TA) THROUGH HOLE 4-DIP, HEXDIP, HVMDIP
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4V, 5V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 18NC @ 5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 870PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: IRLD024PBF
MANUFACTURER STANDARD LEAD TIME: 16 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: 4-DIP (0.300", 7.62MM)
PACKAGING: TUBE
POWER DISSIPATION (MAX): 1.3W (TA)
RDS ON (MAX) @ ID, VGS: 100 MOHM @ 1.5A, 5V
STANDARD PACKAGE: 100
SUPPLIER DEVICE PACKAGE: 4-DIP, HEXDIP, HVMDIP
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±10V
VGS(TH) (MAX) @ ID: 2V @ 250ΜA
Related Products
MFR. Name: Vishay
MFR. Name: Vishay
MFR. Name: Microsemi
MFR. Name: Vishay
MFR. Name: Central Semiconductor Corp
MFR. Name: Infineon Technologies
Please complete form below with your request and a sales representative will contact you shortly. If you have a BOM that needs quoted, please email it to sales@southelectronics.com, or call (334) 458-0070 to speak to a representative .