IRLD110

IRLD110

N-CHANNEL 100V 1A (TA) 1.3W (TA) THROUGH HOLE 4-DIP, HEXDIP, HVMDIP

Call for availability

Manufactured by:

VISHAY

Mfr Part#:  IRLD110

PACKAGE / CASE:  4-DIP (0.300", 7.62MM)

PACKAGING:  TUBE

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  4-DIP, HEXDIP, HVMDIP

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

EXPANDED DESCRIPTION:  N-CHANNEL 100V 1A (TA) 1.3W (TA) THROUGH HOLE 4-DIP, HEXDIP, HVMDIP

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  6.1NC @ 5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  250PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  IRLD110

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  4-DIP (0.300", 7.62MM)

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  1.3W (TA)

RDS ON (MAX) @ ID, VGS:  540 MOHM @ 600MA, 5V

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  4-DIP, HEXDIP, HVMDIP

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  2V @ 250ΜA

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