IRLD120
N-CHANNEL 100V 1.3A (TA) 1.3W (TA) THROUGH HOLE 4-DIP, HEXDIP, HVMDIPCall for availability
Manufactured by:
Mfr Part#: IRLD120
PACKAGE / CASE: 4-DIP (0.300", 7.62MM)
PACKAGING: TUBE
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 4-DIP, HEXDIP, HVMDIP
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 1.3A (TA)
DETAILED DESCRIPTION: N-CHANNEL 100V 1.3A (TA) 1.3W (TA) THROUGH HOLE 4-DIP, HEXDIP, HVMDIP
DRAIN TO SOURCE VOLTAGE (VDSS): 100V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4V, 5V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 12NC @ 5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 490PF @ 25V
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: IRLD120
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: 4-DIP (0.300", 7.62MM)
PACKAGING: TUBE
POWER DISSIPATION (MAX): 1.3W (TA)
RDS ON (MAX) @ ID, VGS: 270 MOHM @ 780MA, 5V
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 4-DIP, HEXDIP, HVMDIP
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±10V
VGS(TH) (MAX) @ ID: 2V @ 250ΜA
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