CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 1.5A (TC)
DETAILED DESCRIPTION: N-CHANNEL 100V 1.5A (TC) 2W (TA), 3.1W (TC) SURFACE MOUNT SOT-223
DRAIN TO SOURCE VOLTAGE (VDSS): 100V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4V, 5V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 6.1NC @ 5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 250PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: IRLL110TRPBF
MANUFACTURER STANDARD LEAD TIME: 18 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-261-4, TO-261AA
PACKAGING: REEL
POWER DISSIPATION (MAX): 2W (TA), 3.1W (TC)
RDS ON (MAX) @ ID, VGS: 540 MOHM @ 900MA, 5V
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: SOT-223
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±10V
VGS(TH) (MAX) @ ID: 2V @ 250ΜA
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