CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 30A (TC)
DETAILED DESCRIPTION: N-CHANNEL 60V 30A (TC) 88W (TC) THROUGH HOLE TO-220AB
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4V, 5V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 35NC @ 5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1600PF @ 25V
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: IRLZ34PBF
MANUFACTURER STANDARD LEAD TIME: 18 WEEKS
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-220-3
PACKAGING: TUBE
POWER DISSIPATION (MAX): 88W (TC)
RDS ON (MAX) @ ID, VGS: 50 MOHM @ 18A, 5V
SUPPLIER DEVICE PACKAGE: TO-220AB
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±10V
VGS(TH) (MAX) @ ID: 2V @ 250ΜA
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