BASE PART NUMBER: MSE1P
CAPACITANCE @ VR, F: 5PF @ 4V, 1MHZ
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - AVERAGE RECTIFIED (IO): 1A
CURRENT - REVERSE LEAKAGE @ VR: 1ΜA @ 600V
DETAILED DESCRIPTION: DIODE STANDARD 600V 1A SURFACE MOUNT MICROSMP (DO-219AD)
DIODE TYPE: STANDARD
MANUFACTURER: VISHAY SEMICONDUCTOR DIODES DIVISION
MANUFACTURER PART NUMBER: MSE1PJ-M3/89A
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE - JUNCTION: -55°C ~ 175°C
PACKAGE / CASE: MICROSMP
PACKAGING: REEL
REVERSE RECOVERY TIME (TRR): 780NS
SERIES: ESMP®
SPEED: STANDARD RECOVERY >500NS, > 200MA (IO)
SUPPLIER DEVICE PACKAGE: MICROSMP (DO-219AD)
VOLTAGE - DC REVERSE (VR) (MAX): 600V
VOLTAGE - FORWARD (VF) (MAX) @ IF: 1.1V @ 1A
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