SI1070X-T1-GE3
N-CHANNEL 30V 236MW (TA) SURFACE MOUNT SC-89-6Call for availability
Manufactured by:
Mfr Part#: SI1070X-T1-GE3
PACKAGE / CASE: SOT-563, SOT-666
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SC-89-6
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
DETAILED DESCRIPTION: N-CHANNEL 30V 236MW (TA) SURFACE MOUNT SC-89-6
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V, 4.5V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 8.3NC @ 5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 385PF @ 15V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI1070X-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 33 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: SOT-563, SOT-666
PACKAGING: REEL
POWER DISSIPATION (MAX): 236MW (TA)
RDS ON (MAX) @ ID, VGS: 99 MOHM @ 1.2A, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SC-89-6
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±12V
VGS(TH) (MAX) @ ID: 1.55V @ 250ΜA
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