CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 660MA
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
FET FEATURE: LOGIC LEVEL GATE
FET TYPE: 2 N-CHANNEL (DUAL)
GATE CHARGE (QG) (MAX) @ VGS: 1.2NC @ 4.5V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI1902DL-T1-E3
MANUFACTURER STANDARD LEAD TIME: 15 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 6-TSSOP, SC-88, SOT-363
PACKAGING: REEL
POWER - MAX: 270MW
RDS ON (MAX) @ ID, VGS: 385 MOHM @ 660MA, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SC-70-6 (SOT-363)
VGS(TH) (MAX) @ ID: 1.5V @ 250ΜA
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