CONFIGURATION:  SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  20 V

DRAIN CURRENT-MAX (ID):  1.13 A

DRAIN-SOURCE ON RESISTANCE-MAX:  280 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PDSO-G6

JESD-609 CODE:  E0

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI1912EDH-T1

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  6

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G6

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SC-70

PEAK REFLOW TEMPERATURE (CEL):  240

PIN COUNT:  6

POLARITY/CHANNEL TYPE:  N-CHANNEL

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN LEAD

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON