CONFIGURATION:  SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

DS BREAKDOWN VOLTAGE-MIN:  12 V

DRAIN CURRENT-MAX (ID):  1 A

DRAIN-SOURCE ON RESISTANCE-MAX:  370 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PDSO-G6

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI1917EDH-T1

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  6

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G6

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SC-70

PIN COUNT:  6

POLARITY/CHANNEL TYPE:  P-CHANNEL

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON