CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 2.2A (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V, 4.5V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 10NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 375PF @ 6V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI2301BDS-T1-E3
MANUFACTURER STANDARD LEAD TIME: 15 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 700MW (TA)
RDS ON (MAX) @ ID, VGS: 100 MOHM @ 2.8A, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-23-3 (TO-236)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±8V
VGS(TH) (MAX) @ ID: 950MV @ 250ΜA
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