CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 3.1A (TC)
DETAILED DESCRIPTION: P-CHANNEL 20V 3.1A (TC) 860MW (TA), 1.6W (TC) SURFACE MOUNT SOT-23-3 (TO-236)
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V, 4.5V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 10NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 405PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI2301CDS-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 22 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 860MW (TA), 1.6W (TC)
RDS ON (MAX) @ ID, VGS: 112 MOHM @ 2.8A, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-23-3 (TO-236)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±8V
VGS(TH) (MAX) @ ID: 1V @ 250ΜA
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