SI2302ADS-T1-E3
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Mfr Part#: SI2302ADS-T1-E3
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-23-3 (TO-236)
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 2.1A (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 10NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 300PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI2302ADS-T1-E3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 700MW (TA)
RDS ON (MAX) @ ID, VGS: 60 MOHM @ 3.6A, 4.5V
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-23-3 (TO-236)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 1.2V @ 50ΜA
ALTERNATE PARTS: SI2302CDS-T1-GE3
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