SI2307BDS-T1-GE3
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Manufactured by:
Mfr Part#: SI2307BDS-T1-GE3
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-23-3 (TO-236)
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 2.5A (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
FET FEATURE: STANDARD
FET TYPE: MOSFET P-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
GATE CHARGE (QG) @ VGS: 15NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 380PF @ 15V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI2307BDS-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 14 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER - MAX: 750MW
RDS ON (MAX) @ ID, VGS: 78 MOHM @ 3.2A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-23-3 (TO-236)
VGS(TH) (MAX) @ ID: 3V @ 250ΜA
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