Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 2.3A (TC)
DETAILED DESCRIPTION: N-CHANNEL 60V 2.3A (TC) 1.09W (TA), 1.66W (TC) SURFACE MOUNT SOT-23-3 (TO-236)
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 6.8NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 190PF @ 30V
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI2308BDS-T1-E3
MANUFACTURER STANDARD LEAD TIME: 33 WEEKS
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.09W (TA), 1.66W (TC)
RDS ON (MAX) @ ID, VGS: 156 MOHM @ 1.9A, 10V
SERIES: TRENCHFET®
SUPPLIER DEVICE PACKAGE: SOT-23-3 (TO-236)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 3V @ 250ΜA
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