CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 10NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 240PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI2308DS-T1-E3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.25W (TA)
RDS ON (MAX) @ ID, VGS: 160 MOHM @ 2A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-23-3 (TO-236)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 3V @ 250ΜA
ALTERNATE PARTS: SI2308BDS-T1-GE3
Related Products
Please complete form below with your request and a sales representative will contact you shortly. If you have a BOM that needs quoted, please email it to sales@southelectronics.com, or call (334) 458-0070 to speak to a representative .