CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3.9A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 20V 3.9A (TA) 750MW (TA) SURFACE MOUNT SOT-23-3 (TO-236)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.8V, 4.5V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  12NC @ 4.5V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI2312BDS-T1-E3

MANUFACTURER STANDARD LEAD TIME:  33 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  750MW (TA)

RDS ON (MAX) @ ID, VGS:  31 MOHM @ 5A, 4.5V

SERIES:  TRENCHFET®

SUPPLIER DEVICE PACKAGE:  SOT-23-3 (TO-236)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  850MV @ 250ΜA