SI2342DS-T1-GE3
N-CHANNEL 8V 6A (TC) 1.3W (TA), 2.5W (TC) SURFACE MOUNT SOT-23Call for availability
Manufactured by:
Mfr Part#: SI2342DS-T1-GE3
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-23
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 6A (TC)
DETAILED DESCRIPTION: N-CHANNEL 8V 6A (TC) 1.3W (TA), 2.5W (TC) SURFACE MOUNT SOT-23
DRAIN TO SOURCE VOLTAGE (VDSS): 8V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 1.2V, 4.5V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 15.8NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1070PF @ 4V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI2342DS-T1-GE3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.3W (TA), 2.5W (TC)
RDS ON (MAX) @ ID, VGS: 17 MOHM @ 7.2A, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-23
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±5V
VGS(TH) (MAX) @ ID: 800MV @ 250ΜA
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