SI2356DS-T1-GE3
N-CHANNEL 40V 4.3A (TC) 960MW (TA), 1.7W (TC) SURFACE MOUNT TO-236Call for availability
Manufactured by:
Mfr Part#: SI2356DS-T1-GE3
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: TO-236
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 4.3A (TC)
DETAILED DESCRIPTION: N-CHANNEL 40V 4.3A (TC) 960MW (TA), 1.7W (TC) SURFACE MOUNT TO-236
DRAIN TO SOURCE VOLTAGE (VDSS): 40V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V, 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 13NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 370PF @ 20V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI2356DS-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 46 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 960MW (TA), 1.7W (TC)
RDS ON (MAX) @ ID, VGS: 51 MOHM @ 3.2A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: TO-236
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±12V
VGS(TH) (MAX) @ ID: 1.5V @ 250ΜA
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