Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 4.8A (TC)
DETAILED DESCRIPTION: P-CHANNEL 30V 4.8A (TC) 1W (TA), 1.7W (TC) SURFACE MOUNT SOT-23
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V, 10V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 35NC @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI2371EDS-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 46 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 1W (TA), 1.7W (TC)
RDS ON (MAX) @ ID, VGS: 45 MOHM @ 3.7A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-23
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±12V
VGS(TH) (MAX) @ ID: 1.5V @ 250ΜA
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