CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3.5A (TA), 13A (TC)

DETAILED DESCRIPTION:  P-CHANNEL 60V 3.5A (TA), 13A (TC) 2W (TA), 4.2W (TC) SURFACE MOUNT 6-TSOP

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  30NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  833PF @ 20V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI3127DV-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  33 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2W (TA), 4.2W (TC)

RDS ON (MAX) @ ID, VGS:  89 MOHM @ 1.5A, 4.5V

SERIES:  TRENCHFET®

SUPPLIER DEVICE PACKAGE:  6-TSOP

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3V @ 250ΜA