SI3424BDV-T1-GE3
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Manufactured by:
Mfr Part#: SI3424BDV-T1-GE3
PACKAGE / CASE: SOT-23-6 THIN, TSOT-23-6
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 6-TSOP
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 8A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 19.6NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 735PF @ 15V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI3424BDV-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 16 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: SOT-23-6 THIN, TSOT-23-6
PACKAGING: REEL
POWER DISSIPATION (MAX): 2.1W (TA), 2.98W (TC)
RDS ON (MAX) @ ID, VGS: 28 MOHM @ 7A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 6-TSOP
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 3V @ 250ΜA
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