SI3429EDV-T1-GE3

SI3429EDV-T1-GE3

P-CHANNEL 20V 8A (TA), 8A (TC) 4.2W (TC) SURFACE MOUNT 6-TSOP

Call for availability

Manufactured by:

VISHAY

Mfr Part#:  SI3429EDV-T1-GE3

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  6-TSOP

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  8A (TA), 8A (TC)

DETAILED DESCRIPTION:  P-CHANNEL 20V 8A (TA), 8A (TC) 4.2W (TC) SURFACE MOUNT 6-TSOP

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.8V, 4.5V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  118NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  4085PF @ 50V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI3429EDV-T1-GE3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER DISSIPATION (MAX):  4.2W (TC)

RDS ON (MAX) @ ID, VGS:  21 MOHM @ 4A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  6-TSOP

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  1V @ 250ΜA

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