CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1.8A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  6V, 10V

EXPANDED DESCRIPTION:  N-CHANNEL 100V 1.8A (TA) 1.14W (TA) SURFACE MOUNT 6-TSOP

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  6.6NC @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI3430DV-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  27 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.14W (TA)

RDS ON (MAX) @ ID, VGS:  170 MOHM @ 2.4A, 10V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  6-TSOP

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2V @ 250ΜA (MIN)