SI3442BDV-T1-E3
N-CHANNEL 20V 3A (TA) 860MW (TA) SURFACE MOUNT 6-TSOPCall for availability
Manufactured by:
Mfr Part#: SI3442BDV-T1-E3
PACKAGE / CASE: SOT-23-6 THIN, TSOT-23-6
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 6-TSOP
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 3A (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V, 4.5V
EXPANDED DESCRIPTION: N-CHANNEL 20V 3A (TA) 860MW (TA) SURFACE MOUNT 6-TSOP
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 5NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 295PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI3442BDV-T1-E3
MANUFACTURER STANDARD LEAD TIME: 16 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: SOT-23-6 THIN, TSOT-23-6
PACKAGING: REEL
POWER DISSIPATION (MAX): 860MW (TA)
RDS ON (MAX) @ ID, VGS: 57 MOHM @ 4A, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 6-TSOP
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±12V
VGS(TH) (MAX) @ ID: 1.8V @ 250ΜA
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