SI3851DV-T1-E3
P-CHANNEL 30V 1.6A (TA) 830MW (TA) SURFACE MOUNT 6-TSOPCall for availability
Manufactured by:
Mfr Part#: SI3851DV-T1-E3
PACKAGE / CASE: SOT-23-6 THIN, TSOT-23-6
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 6-TSOP
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 1.6A (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
EXPANDED DESCRIPTION: P-CHANNEL 30V 1.6A (TA) 830MW (TA) SURFACE MOUNT 6-TSOP
FET FEATURE: SCHOTTKY DIODE (ISOLATED)
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 3.6NC @ 5V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI3851DV-T1-E3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: SOT-23-6 THIN, TSOT-23-6
PACKAGING: REEL
POWER DISSIPATION (MAX): 830MW (TA)
RDS ON (MAX) @ ID, VGS: 200 MOHM @ 1.8A, 10V
SERIES: LITTLE FOOT®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 6-TSOP
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 1V @ 250ΜA (MIN)
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