SI4210DY-T1-GE3
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Mfr Part#: SI4210DY-T1-GE3
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 8-SO
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 6.5A
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
FET FEATURE: LOGIC LEVEL GATE
FET TYPE: 2 N-CHANNEL (DUAL)
FAMILY: TRANSISTORS - FETS, MOSFETS - ARRAYS
GATE CHARGE (QG) @ VGS: 12NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 445PF @ 15V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI4210DY-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 13 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
POWER - MAX: 2.7W
RDS ON (MAX) @ ID, VGS: 35.5 MOHM @ 5A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 8-SO
VGS(TH) (MAX) @ ID: 2.5V @ 250ΜA
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