SI4403CDY-T1-GE3

SI4403CDY-T1-GE3

P-CHANNEL 20V 13.4A (TC) 2.5W (TA), 5W (TC) SURFACE MOUNT 8-SO

Call for availability

Manufactured by:

VISHAY

Mfr Part#:  SI4403CDY-T1-GE3

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-SO

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  13.4A (TC)

DETAILED DESCRIPTION:  P-CHANNEL 20V 13.4A (TC) 2.5W (TA), 5W (TC) SURFACE MOUNT 8-SO

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.8V, 4.5V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  90NC @ 8V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  2380PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI4403CDY-T1-GE3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.5W (TA), 5W (TC)

RDS ON (MAX) @ ID, VGS:  15.5 MOHM @ 9A, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-SO

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  1V @ 250ΜA

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