SPECIFICATION
CONFIGURATION: SINGLE
DRAIN CURRENT-MAX (ABS) (ID): 8 A
FET TECHNOLOGY: METAL-OXIDE SEMICONDUCTOR
MANUFACTURER: VISHAY INTERTECHNOLOGIES
MANUFACTURER PART NUMBER: SI4435DY-T1-A-E3
OPERATING MODE: ENHANCEMENT MODE
PACKAGE DESCRIPTION: ,
POLARITY/CHANNEL TYPE: P-CHANNEL
POWER DISSIPATION-MAX (ABS): 2.5 W
SUBCATEGORY: OTHER TRANSISTORS
SURFACE MOUNT: YES
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