CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 10A (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 12V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 165NC @ 5V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI4453DY-T1-E3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.5W (TA)
RDS ON (MAX) @ ID, VGS: 6.5 MOHM @ 14A, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 8-SO
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 900MV @ 600ΜA
ALTERNATE PARTS: SI4477DY-T1-GE3
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