SI4463BDY-T1-GE3
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Manufactured by:
Mfr Part#: SI4463BDY-T1-GE3
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 8-SO
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 9.8A (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
FET FEATURE: STANDARD
FET TYPE: MOSFET P-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
GATE CHARGE (QG) @ VGS: 56NC @ 4.5V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI4463BDY-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 15 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
POWER - MAX: 1.5W
RDS ON (MAX) @ ID, VGS: 11 MOHM @ 13.7A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 8-SO
VGS(TH) (MAX) @ ID: 1.4V @ 250ΜA
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