SI4477DY-T1-GE3
P-CHANNEL 20V 26.6A (TC) 3W (TA), 6.6W (TC) SURFACE MOUNT 8-SOCall for availability
Manufactured by:
Mfr Part#: SI4477DY-T1-GE3
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 8-SO
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 26.6A (TC)
DETAILED DESCRIPTION: P-CHANNEL 20V 26.6A (TC) 3W (TA), 6.6W (TC) SURFACE MOUNT 8-SO
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V, 4.5V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 190NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 4600PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI4477DY-T1-GE3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
POWER DISSIPATION (MAX): 3W (TA), 6.6W (TC)
RDS ON (MAX) @ ID, VGS: 6.2 MOHM @ 18A, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 8-SO
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±12V
VGS(TH) (MAX) @ ID: 1.5V @ 250ΜA
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