CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  17.3A (TA)

DETAILED DESCRIPTION:  P-CHANNEL 30V 17.3A (TA) 3.1W (TA), 6.9W (TC) SURFACE MOUNT 8-SO

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  153NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  4620PF @ 15V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI4491EDY-T1-GE3

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.1W (TA), 6.9W (TC)

RDS ON (MAX) @ ID, VGS:  6.5 MOHM @ 13A, 10V

SERIES:  TRENCHFET®

SUPPLIER DEVICE PACKAGE:  8-SO

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±25V

VGS(TH) (MAX) @ ID:  2.8V @ 250ΜA