SI4816BDY-T1-GE3
MOSFET ARRAY 2 N-CHANNEL (HALF BRIDGE) 30V 5.8A, 8.2A 1W, 1.25W SURFACE MOUNT 8-SOCall for availability
Manufactured by:
Mfr Part#: SI4816BDY-T1-GE3
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 8-SO
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
BASE PART NUMBER: SI4816
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 5.8A, 8.2A
DETAILED DESCRIPTION: MOSFET ARRAY 2 N-CHANNEL (HALF BRIDGE) 30V 5.8A, 8.2A 1W, 1.25W SURFACE MOUNT 8-SO
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
FET FEATURE: LOGIC LEVEL GATE
FET TYPE: 2 N-CHANNEL (HALF BRIDGE)
GATE CHARGE (QG) (MAX) @ VGS: 10NC @ 5V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI4816BDY-T1-GE3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
POWER - MAX: 1W, 1.25W
RDS ON (MAX) @ ID, VGS: 18.5 MOHM @ 6.8A, 10V
SERIES: LITTLE FOOT®
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 8-SO
VGS(TH) (MAX) @ ID: 3V @ 250ΜA
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