CONFIGURATION: SINGLE
DRAIN CURRENT-MAX (ABS) (ID): 4.6 A
FET TECHNOLOGY: METAL-OXIDE SEMICONDUCTOR
JESD-609 CODE: E3
MANUFACTURER: VISHAY INTERTECHNOLOGIES
MANUFACTURER PART NUMBER: SI4833BDY-T1-GE3
MOISTURE SENSITIVITY LEVEL: 1
OPERATING TEMPERATURE-MAX: 150 °C
PACKAGE DESCRIPTION: ,
PEAK REFLOW TEMPERATURE (CEL): 260
POLARITY/CHANNEL TYPE: P-CHANNEL
POWER DISSIPATION-MAX (ABS): 2.75 W
SUBCATEGORY: OTHER TRANSISTORS
SURFACE MOUNT: YES
TERMINAL FINISH: PURE MATTE TIN
TIME@PEAK REFLOW TEMPERATURE-MAX (S): 30
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