SI4866DY-T1-E3
N-CHANNEL 12V 11A (TA) 1.6W (TA) SURFACE MOUNT 8-SOCall for availability
Manufactured by:
Mfr Part#: SI4866DY-T1-E3
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: 8-SO
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 11A (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 12V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V, 4.5V
EXPANDED DESCRIPTION: N-CHANNEL 12V 11A (TA) 1.6W (TA) SURFACE MOUNT 8-SO
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 30NC @ 4.5V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI4866DY-T1-E3
MANUFACTURER STANDARD LEAD TIME: 26 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.6W (TA)
RDS ON (MAX) @ ID, VGS: 5.5 MOHM @ 17A, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: 8-SO
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±8V
VGS(TH) (MAX) @ ID: 600MV @ 250ΜA (MIN)
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