SI4914BDY-T1-GE3

SI4914BDY-T1-GE3

MOSFET ARRAY 2 N-CHANNEL (HALF BRIDGE) 30V 8.4A, 8A 2.7W, 3.1W SURFACE MOUNT 8-SO

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Manufactured by:

VISHAY

Mfr Part#:  SI4914BDY-T1-GE3

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-SO

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

BASE PART NUMBER:  SI4914

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  8.4A, 8A

DETAILED DESCRIPTION:  MOSFET ARRAY 2 N-CHANNEL (HALF BRIDGE) 30V 8.4A, 8A 2.7W, 3.1W SURFACE MOUNT 8-SO

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

FET FEATURE:  STANDARD

FET TYPE:  2 N-CHANNEL (HALF BRIDGE)

GATE CHARGE (QG) (MAX) @ VGS:  10.5NC @ 4.5V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI4914BDY-T1-GE3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER - MAX:  2.7W, 3.1W

RDS ON (MAX) @ ID, VGS:  21 MOHM @ 8A, 10V

SERIES:  LITTLE FOOT®

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-SO

VGS(TH) (MAX) @ ID:  2.7V @ 250ΜA

ALTERNATE PARTS:  SI4914BDY-T1-E3

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