CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  6.7A

DETAILED DESCRIPTION:  MOSFET ARRAY 2 P-CHANNEL (DUAL) 12V 6.7A 1.1W SURFACE MOUNT 8-SO

DRAIN TO SOURCE VOLTAGE (VDSS):  12V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 P-CHANNEL (DUAL)

GATE CHARGE (QG) (MAX) @ VGS:  52NC @ 4.5V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI4931DY-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  15 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER - MAX:  1.1W

RDS ON (MAX) @ ID, VGS:  18 MOHM @ 8.9A, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  8-SO

VGS(TH) (MAX) @ ID:  1V @ 350ΜA