SI5406CDC-T1-GE3
N-CHANNEL 12V 6A (TC) 2.3W (TA), 5.7W (TC) SURFACE MOUNT 1206-8 CHIPFET?Call for availability
Manufactured by:
Mfr Part#: SI5406CDC-T1-GE3
PACKAGE / CASE: 8-SMD, FLAT LEAD
PACKAGING: REEL
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: 1206-8 CHIPFET?
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 6A (TC)
DETAILED DESCRIPTION: N-CHANNEL 12V 6A (TC) 2.3W (TA), 5.7W (TC) SURFACE MOUNT 1206-8 CHIPFET?
DRAIN TO SOURCE VOLTAGE (VDSS): 12V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 1.8V, 4.5V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 32NC @ 8V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1100PF @ 6V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI5406CDC-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 27 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-SMD, FLAT LEAD
PACKAGING: REEL
POWER DISSIPATION (MAX): 2.3W (TA), 5.7W (TC)
RDS ON (MAX) @ ID, VGS: 20 MOHM @ 6.5A, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: 1206-8 CHIPFET?
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±8V
VGS(TH) (MAX) @ ID: 1V @ 250ΜA
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