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SI5513DC-T1

SI5513DC-T1

Call for availability

Manufactured by:

VISHAY

Mfr Part#:  SI5513DC-T1

PACKAGE DESCRIPTION:  ,

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

DRAIN CURRENT-MAX (ABS) (ID):  2.1 A

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

MANUFACTURER:  VISHAY INTERTECHNOLOGIES

MANUFACTURER PART NUMBER:  SI5513DC-T1

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE DESCRIPTION:  ,

POLARITY/CHANNEL TYPE:  N-CHANNEL AND P-CHANNEL

POWER DISSIPATION-MAX (ABS):  2.1 W

SUBCATEGORY:  OTHER TRANSISTORS

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