SI6562CDQ-T1-GE3
MOSFET ARRAY N AND P-CHANNEL 20V 6.7A, 6.1A 1.6W, 1.7W SURFACE MOUNT 8-TSSOPCall for availability
Manufactured by:
Mfr Part#: SI6562CDQ-T1-GE3
PACKAGE / CASE: 8-TSSOP (0.173", 4.40MM WIDTH)
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 8-TSSOP
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
BASE PART NUMBER: SI6562
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 6.7A, 6.1A
DETAILED DESCRIPTION: MOSFET ARRAY N AND P-CHANNEL 20V 6.7A, 6.1A 1.6W, 1.7W SURFACE MOUNT 8-TSSOP
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
FET FEATURE: LOGIC LEVEL GATE
FET TYPE: N AND P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 23NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 850PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI6562CDQ-T1-GE3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-TSSOP (0.173", 4.40MM WIDTH)
PACKAGING: REEL
POWER - MAX: 1.6W, 1.7W
RDS ON (MAX) @ ID, VGS: 22 MOHM @ 5.7A, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 8-TSSOP
VGS(TH) (MAX) @ ID: 1.5V @ 250ΜA
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