CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 4.9A
DRAIN TO SOURCE VOLTAGE (VDSS): 12V
FET FEATURE: LOGIC LEVEL GATE
FET TYPE: 2 P-CHANNEL (DUAL)
FAMILY: TRANSISTORS - FETS, MOSFETS - ARRAYS
GATE CHARGE (QG) @ VGS: 28NC @ 4.5V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI6913DQ-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 15 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-TSSOP (0.173", 4.40MM WIDTH)
PACKAGING: REEL
POWER - MAX: 830MW
RDS ON (MAX) @ ID, VGS: 21 MOHM @ 5.8A, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 8-TSSOP
VGS(TH) (MAX) @ ID: 900MV @ 400ΜA
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