CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3.8A (TC)

DETAILED DESCRIPTION:  P-CHANNEL 200V 3.8A (TC) 3.7W (TA), 52W (TC) SURFACE MOUNT POWERPAK® 1212-8

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  6V, 10V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  25NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  666PF @ 50V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI7119DN-T1-E3

MANUFACTURER STANDARD LEAD TIME:  15 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -50°C ~ 150°C (TJ)

PACKAGE / CASE:  POWERPAK® 1212-8

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.7W (TA), 52W (TC)

RDS ON (MAX) @ ID, VGS:  1.05 OHM @ 1A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  POWERPAK® 1212-8

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA