CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  60A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 60V 60A (TC) 6.25W (TA), 104W (TC) SURFACE MOUNT POWERPAK® SO-8

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  75NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  2830PF @ 30V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI7164DP-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  17 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  POWERPAK® SO-8

PACKAGING:  REEL

POWER DISSIPATION (MAX):  6.25W (TA), 104W (TC)

RDS ON (MAX) @ ID, VGS:  6.25 MOHM @ 10A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  POWERPAK® SO-8

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4.5V @ 250ΜA