SI7450DP-T1-GE3
N-CHANNEL 200V 3.2A (TA) 1.9W (TA) SURFACE MOUNT POWERPAK® SO-8Call for availability
Manufactured by:
Mfr Part#: SI7450DP-T1-GE3
PACKAGE / CASE: POWERPAK® SO-8
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® SO-8
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 3.2A (TA)
DETAILED DESCRIPTION: N-CHANNEL 200V 3.2A (TA) 1.9W (TA) SURFACE MOUNT POWERPAK® SO-8
DRAIN TO SOURCE VOLTAGE (VDSS): 200V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 6V, 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 42NC @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI7450DP-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 46 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: POWERPAK® SO-8
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.9W (TA)
RDS ON (MAX) @ ID, VGS: 80 MOHM @ 4A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® SO-8
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 4.5V @ 250ΜA
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