CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 15A (TA)
DETAILED DESCRIPTION: N-CHANNEL 60V 15A (TA) 1.9W (TA) SURFACE MOUNT POWERPAK® SO-8
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 160NC @ 10V
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI7478DP-T1-E3
MANUFACTURER STANDARD LEAD TIME: 33 WEEKS
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: POWERPAK® SO-8
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.9W (TA)
RDS ON (MAX) @ ID, VGS: 7.5 MOHM @ 20A, 10V
SERIES: TRENCHFET®
SUPPLIER DEVICE PACKAGE: POWERPAK® SO-8
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 3V @ 250ΜA
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